the vrf154fl is a gold-metallized silicon n-channel rf power transis- tor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. features ? improved ruggedness v (br)dss = 170v ? designed for 2 - 100mhz operation ? 600w with 17db typical gain @ 30mhz, 50v ? excellent stability & low imd ? common source con guration ? available in matched pairs ? nitride passivated ? economical flangeless package ? refractory gold metallization ? high voltage replacement for mrf154 ? rohs compliant symbol parameter vrf154fl(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 60 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 1350 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 40a, v gs = 10v) 3.0 5.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 4.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 4.0 a g fs forward transconductance (v ds = 10v, i d = 40a) 16 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4939 rev f 9-2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.13 c/w r jhs junction to sink thermal resistance (use high ef ciency thermal joint compound and planar heat sink surface.) 0.22 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. d g s s vrf154fl VRF154FLMP 50v, 600w, 80mhz
vrf154fl(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1750 pf c oss output capacitance v ds = 50v 775 c rss reverse transfer capacitance f = 1mhz 135 functional characteristics symbol parameter min typ max unit g ps f = 30mhz, v dd = 50v, i dq = 800ma, p out = 600w 17 db d f = 30mhz, v dd = 50v, i dq = 800ma, p out = 600w pep 45 % imd (d3) f1 = 30mhz, f2 = 30.001mhz, v dd = 50v, i dq = 800ma, p out = 600w pep 1 -25 dbc 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4939 rev f 9-2010 0 20 40 60 80 100 120 140 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 1 10 100 1 10 100 800 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 25 50 75 100 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (f) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 9.0v 11v 6.0v 14v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax v gs = 4.0v bvdss line 8.0v 7.0v 5.0v
0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 10 -5 10 -4 10 -3 10 -2 0.1 1 10 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 200 400 600 800 1000 1200 0 5 10 15 20 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 70 80 output power (w pep ) p out , input power (watts pep) figure 6. p out versus p in output power (w pep ) p out , input power (watts pep) figure 7. p out versus p in 50v freq=30mhz freq=65mhz 50v v ds = 40v 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 v ds = 40v 050-4939 rev f 9-2009 typical performance curves vrf154fl(mp)
vrf154fl(mp) c1 - 1000pf ceramic c2, c3, c4, c8, c9, c10, c11 -0.1 f ceramic c5 - 10 f / 100 v electrolytic c6, c7 - 0.1 f ceramic, (atc 200/823 or equivalent) d1 - 28v zener, 1n5362 or equivalent d3 - 1n4148 ic1 - mc1723 l1, l2 - fair-rite products corp. ferrite beads #2673000801 r1, r2, r3 - 10k trimpot r4 - 1.0 k /1.0w r5 - 10 ohms r6 - 2.0k r7 - 10k r8 - thermistor, 10k (25c), 2.5k (75c) r9, r10 - 100 ohms r11, r12 - 1.0k r13, r14 - 50 , 2 x 100 2w carbon in parallel t1 - 9:1 transformer, trifilar and balun wound on separate fair-rite products corp. balun cores #286100012, 5 turns each. t2 - 1:9 transformer balun 50 ohm co-ax cable rg-188,low impedance lines w.l. gore 16 ohms co-ax type cxn 1837. each winding threaded through two fair-rite products corp. #2661540001 ferrite sleeves (6 each). xtr - vrf154 bias + - 30 - 40 v r4 d1 c1 r3 r7 r5 r6 r8 temp. tracking r2 d3 c3 r10 r14 c11 c9 t1 input c2 r9 d2 r1 r11 r12 c8 r13 c10 xtr xtr l1 l2 - + 40 v c4 c5 output ic1 c6 c7 t2 + d.u.t. d.u.t. rf input l3 l1 l2 output c14 c10 c13 c12 c15 c16 l6 c6 c5 c9 c4 c8 c7 c1, c2, c6, c7 arco 465 mica trimmer c3 1800pf atc700b ceramic c4 680pf metal clad 500v mica c5 390pf metal clad 500v mica c8 100pf atc 700e ceramic c9 120pf atc 700e ceramic c10 - c13 .01uf 100v ceramic smt c14 - c16 .1uf 100v ceramic smt 50v vbias c1 c2 c3 c11 r1 r2 r3 l4 l5 30mhz test circuit 2-50mhz 1kw wideband ampli er 050-4939 rev f 9-2009
vrf154fl(mp) pin 1 - drain pin 2 - source pin 3 - source pin 4 - gate hazardous material warning the ceramic portion of the device between leads and mounting ange is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. 1.000 .500 .150r .500 .466 .750 1.500 1.250 .300 .200 .250 .250 .005 .040 .125d 1 2 4 3 d s g 050-4939 rev f 9-2010 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. thermal considerations and package mounting: the rated 1350w power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 200 c. the thermal re- sistance between junctions and case mounting surface is 0.13c/w. when installed, an additional thermal im- pedance of 0.09c/w between the package base and the mounting surface is smooth and at. thermal joint compound must be used to reduce the effects of small surface irregularities. the heatsink should incorporate a copper heat spreader to obtain best results. the lid maintains the required mounting pressure while al- lowing for thermal expansion of both the device and the heat sink. four 6-32 (m3.5) screws provide the minimum 125 lb. required mounting force. t=4-6 in-lb. please refer to app note 1802 "mounting instructions for flangeless packages." adding mp at the end of p/n speci es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%.
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